DXT2907A discrete semiconductors r dc components co., ltd. technical specifications of pnp epitaxial planar transistor pinning 1 = base 2 = collector 3 = emitter description designed for general purpose amplifier and high -speed, medium-power switching applications. sot-89 dimensions in inches and (millimeters) .063(1.60).055(1.40) .066(1.70).059(1.50) .167(4.25).159(4.05) .016(0.41).014(0.35) .120(3.04) .117(2.96) .181(4.60).173(4.40) .060(1.52).058(1.48) .020(0.51).014(0.36) .102(2.60).095(2.40) 1 2 3 characteristic symbol min typ max unit test conditions collector-base breakdown volatge bvcbo -60 - - v ic=-10ma collector-emitter breakdown voltage bvceo -60 - - v ic=-10ma emitter-base breakdown volatge bvebo -5 - - v ie=-10ma collector cutoff current icbo - - -10 na vcb =-50v icex - - -50 na vce =-30v, vbe=-0.5v collector-emitter saturation voltage (1) vce(sat)1 - -0.2 -0.4 mv ic=-150ma, ib=-15ma vce(sat)2 - -0.5 -1.6 v ic=-500ma, ib=-50ma base-emitter saturation voltage (1) vbe(sat)1 - - -1.3 v ic=-150ma, ib=-15ma vbe(sat)2 - - -2.6 v ic=-500ma, ib=-50ma hfe1 75 - - - ic=-100ma, vce=-10v hfe2 100 - - - ic=-1ma, vce=-10v dc current gain(1) hfe3 100 - - - ic=-10ma, vce=-10v hfe4 100 - 300 - ic=-150ma, vce=-10v hfe5 50 - - - ic=-500ma, vce=-10v transition frequency ft 200 - - mhz vce =-20v, f=100mhz, ic=-50ma output capacitance cob - - 8 pf vcb =-10v, f=1mhz electrical characteristics(ratings at 25 oc ambient temperature unless otherwise specified) (1)pulse test: pulse width 380ms, duty cycle 2% characteristic symbol rating unit collector-base voltage vcbo -60 v collector-emitter voltage vceo -60 v emitter-base voltage vebo -5 v collector current ic -600 ma total power dissipation pd 1.2 w junction temperature tj +150 oc storage temperature tstg -55 to +150 oc absolute maximum ratings(ta=25oc)
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